In the afternoon on 28th August, symposium of A-7 for next generation of fuel cell science was organized. The large room fully occupied on this date. So many participants wanted to listen the hot talk by active scientists.
1st Phot displays the lecture scene by Professor Ishihara who is authority in solid oxide fuel cell science. 2nd one shows lecture scene of Professor Nagao (Nagoya University) who discovered unique direct biomas fuel cell devices.
Also, Professor Kondo (University of Tsukuba) introduced his famous work for non-precious metal. Those invited talks paid high level attention in our symposium.
2nd day of our symposium will be started from 9 am in the South Wing room 21 of Yoshida Campus.
Look forward to seeing you in there.
Invited lecture scene by Professor Ishihara
Invited lecture scene by Professor Nagao
The symposium C-2 started from the afternoon of August 28. Starting from the brief introduction of scope of this symposium by organizer, we had one contributed talk and 7 invited talks regarding the dynamics of polymer chain in polymer thin films, the microdomain structure control of block copolymers, the structure and electronic properties of organic thin films, and advanced multiscale simulation of polymeric solids. We have more than 50 participants and very active discussions throughout this afternoon. We also have poster session in the evening. 30 poster papers were presented and active discussion was continued around 8pm. . Symposium organizers will select two ACS Langmuir Poster Awards and one RSC Soft Matter Poster Award. The C-2 symposium will continue until the afternoon August 30. (by K. Kojio and A. Takahara)
Invited talk by Prof. Opelia K. C. Tsui (Hong Kong University of Science and Technology)
The first plenary lecture was given by Nobel Prize Winner, Hiroshi Amano, Director, Center for Integrated Research of Future Electronics, and a Professor, Institute of Materials and Systems for Sustainability, Nagoya University. The Clock Tower Hall was so jam-packed there were so many standing audiences.
The title of his plenary lecture was “Development of Sustainable Smart Society via Transformative Electronics”. At the beginning of the lecture, he demonstrated the mechanism of the generation of white light using the arrays of blue LEDs with a practiced hand. He is proud that the white LEDs in conjunction with solar cells and batteries enable nomadic children of Mongolia to study nights, He emphasized the contribution of the white LED to the reduction of power consumption, His lecture was composed of three parts: AlGaN-based deep ultraviolet LEDs (DUV LED), GaN-based heterojunction field-effect transistors (HFETs) and photocathodes (or electron emitters).
According to UNICEF report in 2015, 663 million people still lack access to safe drinking water and 2.4 billion people do not use safe sanitation facilities. The high-power DUV LEDs have been utilized in commercial water sterilization and purification systems.
He compared the energy losses in photovoltaic power generation to bank transfer fees just for fun. By replacing Si-based power devices with GaN-based power devices, the average efficiency of inverters or converters can be improved from 95% to more than 99%. He said that one of his dreams is to replace the transformers used in Shinkansen train cars by the semiconductor devices completely.
In comparison with the commercial GaAs photocathodes, GaN and InGaN photocathodes have much longer lifetimes and higher quantum yields. He demonstrated that the short high-power pulsed operation is very promising for observing the blurring of moving objects.
All the audiences had a sense of the possibilities for further development of the research on the GaN based devices in the future.
Mesostructured SrTiO3/BaTiO3 Hybrid Films by Surfactant-Templated Sol-Gel Pathway with Robust Ferroelectricity
M. B. Zakaria1 of NIMS, Tsukuba, Japan, and his colleagues reported an unique method to make mesostructured SrTiO3/BaTiO3 Hybrid Films for stable higher dielectric capacitor application. At first, he made a mesostructured SrTiO3. Due to the missing volume of the SrTiO3, the substrate showed a concave structure. Then BaTiO3 goes into mesostructed SrTiO3 to form a mesostructured SrTiO3/BaTiO3 composite. Here a large number of strains can be created in the composite film, thereby leading to dramatic enhancement of ferroelectric property. Practically
mesostructured STO/BTO composite films showed the highest dielectric constant among all reported STO/BTO composites.
Materials Design for the Biomedical Imaging in OTN Near Infrared Transparent Optical Window
Kohei Soga of Tokyo University of Science, Japan, gave an excellent keynote talk in the oral session of Symposium A-9 on August 28. He explained that “Transparency” is one of the hard challenges for the developer of optical biomedical imaging techniques and optical loss is basically caused by scattering and absorption. In order to avoid scattering, he used over-1000 nm near-infrared light. With a combination of an InGaAs CCD camera and near-infrared fluorescent materials, his group obtained clear image of biomedical imaging. Soga’s group developed both imaging systems and fluorescent materials. He developed organic dyes, quantum dots, graphene related materials, and rare-earth doped ceramics as near-infrared fluorescent materials. The rare-earth doped ceramics can have multiple functions; their application could be therapy and diagnosis at the same time. He also suggested that over-2000 nm near-infrared wavelength region could be used for biomedical imaging. Over 20 participants attended the keynote.
Before the keynote, Lei Miao of Guilin University of Electronic Technology, China, gave an invited lecture of “Fabrication and Thermoelectric Properties of Flexible Films Based on Telluride Nanowires.” Her films could be used for portable/wearable electronic devices.
On this day Symposium A-9 had sessions for three oral papers and 39 poster papers with active discussion.
Chairmans : David Berthebaud and Kanishka Biswas.
The sulphide session was opened by invited speakers Dr. Emmanuel Guilmeau from CNRS CRISMAT, Caen, France on new complex sulphides. He presented latest development on advanced synthesis and characterization of p-type sulphides in his group. These results included original characterization of this material through Mossbauer spectroscopy and neutron diffraction. He was followed by another invited talk from Pr. Anthony Powell, Reading University, UK, who as well presented interesting development on sulphides materials. Those both talks showed that this field is very active. Third invited talk of this session was Pr. Kanishka Biswas from JNCASR Bangalore; his talk showed latest results and comprehensive study of chalcogenides materials with ultra-low thermal conductivity. Four more contributed talks followed this introduction by invited speakers. Dr. Tristan Barbier from CRISMAT, presented new synthesis method to produce pure cubanite, a copper-based mineral sulphide through microwave irradiation. This technic allows synthesis of homogenous sample in less than a minute. It was followed by a talk of Dr. Hongyao XIE from Wuhan University who also presented original synthesis method to produce copper based sulphide materials. He successfully synthesized chalcopyrite through rapid thermal expansion. An additional talk from Wuhan University was given by Dr. Dongwang YANG on the synthesis and thermoelectric properties of dicopper chalcogenides. Finally, the last talk before closing this interesting session was given by Dr. Hiroki NAGAI from Tohoku University who presented his work on the exploration of new sulphide compounds know as olivine-sulfides.
Symposium B-3: Organic and Molecular Electronics Invited talks and poster presentations for an award.
We had three invited talks and three contributing presentations on the first day of the conference. About thirty researchers joined the session. Toshinari Matsushima from Kyushu University reported organic-inorganic perovskite materials as the semiconductor in field-effect transistors showing excellent carrier transport. Matsushima and co-authors demonstrate a record hole mobility of up to 15 cm2 V-1 s-1 at room temperature along with negligible hysteresis and good bias stability in p-channel transistors with a spin-coated semiconductor of the perovskite (C6H5C2H4NH3)2SnI4 by solving the aforementioned issues through surface treatment of the substrate with a self-assembled monolayer containing ammonium iodide terminal groups in combination with the adoption of atop-contact/top-gate structure with MoOx hole injection layers. Masatoshi Sakai proposed solvent-free printing. Hisao Ishii reported precise measurement of electronic structures. Poster session was also held. Many students reported their study with a great vitality.
Prof. Matsushima giving an invited talk.